SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 1 of 9 www.silikron.com main product characteristics: v dss 25 v r ds (on) 4.1 mohm (typ . ) i d 60 a features and benefits : description : absolute max rating : symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 60 a id @ tc = 100c continuous drain current, vgs @ 10v 50 idm pulsed drain current 1 30 ism pulsed source current (body diode) 1 30 pd @tc = 25c power dissipation 45 w pd @tc = 100 c power dissipation 22 w v ds drain - source voltage 25 v vgs gate - to - source voltage 2 0 v dv/dt p eak diode recovery voltage 1 .5 v /n s eas single pulse avalanche energy @ l=0.1mh 90 mj ear repetitive avalanche energy 228 iar avalanche c urrent @ l=0.1mh 42 a tj tstg operating junction and storage temperature range - 55 to + 175 c to - 252 (d - pak) marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? 17 5 operating temperature it utilizes the latest frr mos (fast reverse recovery mos) trench processing techniques to ach ieve extremely low on resistance , fast switching speed and short reverse recovery time . these features combine to make this design an extremely efficient and reliable device for use in pwm, load switching and a wide variety of other applications .
SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 2 of 9 www.silikron.com thermal resistance symbol characterizes value unit r jc junction - to - case 2.5 /w r j a junction - to - ambient ( t 10s ) 1 3 /w junction - t o - ambient (pcb mounted, steady - state) 3 6 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions bvdss drain - to - source breakdown voltage 25 v vgs = 0v, id = 250a rds(on) static drain - to - source on - resistance 4.1 6 m vgs = 10v id = 30 a tj = 1 25 6.5 vgs(th) gate threshold voltage 1.2 1.9 2.5 v vds = vgs, id = 250a tj = 1 25 1. 2 idss drain - to - source leakage current 10 a vds = 25 v, vgs = 0v 50 vds = 25 v, vgs = 0v, tj = 55 c igss gate - to - source forward leakage 1 00 na vgs = 20 v gate - to - source reverse leakage - 1 00 vgs = - 20 v qg total gate charge 35. 8 40 nc id = 30 a , vds = 12.5 v , vgs = 10v qgs gat e - to - source charge 3.8 6 qgd gate - to - drain("miller") charge 13. 1 15 td(on) turn - on delay time 10.5 ns vgs=10v, vds=1 2.5 v, rl= 0.42 , rgen=3 tr rise time 65.7 td(off) turn - off delay time 27.0 tf fall time 8. 2 ciss input capacitance 1732 pf vgs = 0v , vds = 12.5 v , ? = 1.0mhz coss output capacitance 512 crss reverse transfer capac itance 323 r g gate resistance 1. 4 v gs =0v, v ds =0v, f=1mhz
SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 3 of 9 www.silikron.com source - drain ratings and characteristics symbol parameter min. typ. max . units conditions is maximum body - diode continuous curren 60 a vsd diode forward voltage 0. 69 1 v is=1a, vgs=0v trr reverse recovery time 18.3 ns tj = 25c, if =30a, di/dt = 15 0a/s qrr reverse recovery charge 6.4 nc test circuits and waveforms switch waveforms:
SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 4 of 9 www.silikron.com t ypical electrical and thermal characteristics figure 2: typical transfer characteristics figure 1: typical ou tput characteristics figure 5: on - resistance vs. gate - source voltage figure 6: body - diode characteristics figure 3: on - resistance vs. drain current and gate voltage figure 4: on - resistance vs. junction temperature 10v 7v 6v 3.5v 4v 4.5v 0 20 40 60 80 100 0 1 2 3 4 5 vds,drain to source voltage(v) id,drain current(a) 125 25 vds=5v 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vgs,gate to source voltage(v) id,drain current(a) 125 25 id=30a 0 5 10 15 20 25 30 2 3 4 5 6 7 8 9 10 vgs,gate to source voltage(v) rdson,drain-to-source on resistance(normalized) 125 25 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 vsd,source to drain voltage(v) is,source to drain current(a) vgs=4.5v vgs=10v 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 id,drain current(a) rdson,drain-to-source on resistance vgs=10v id=30a vgs=4.5v id=20a 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 0 25 50 75 100 125 150 175 200 tj,junction temperature(c) rdson,drain-to-source on resistance(normalized)
SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 5 of 9 www.silikron.com t ypical electrical and thermal characteristics figure 7: gate - charge characteristics figure figure 8: capacitance characteristics figure 9: maximum forward biased sa fe operating area figure 10: single pulse power rating junction - to - cas e figure 1 1 : power de - rating figure 1 2 : current de - rating 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) power dissipation (w) vds=12.5v id=30a 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) vgs,gate to source voltage(v) ciss coss crss vgs=0,f=1mhz ciss = cgd+cgs , cds shorted coss = cds+cgd crss = cgd 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 vds, drain to source voltage(v) capacitance (pf) 10us 100us 1ms 10ms dc ron limited tj(max )=175 tc =25 0.1 1 10 100 1000 0.01 0.1 1 10 100 vds,drain to source voltage(v) id,drain current(a) tj(max )=175 ta=25 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) power ( w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) id,drain current(a)
SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 6 of 9 www.silikron.com t ypical electrical and thermal characteristics n otes: the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the valu e of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction - to - case thermal impedence which is measured with the device mounted to a lar ge heatsink, assuming a maximum junction temperature of tj(max)=175c. the maximum current rating is limited by bond - wires. figure 1 4 : normalized maximum transient thermal i mpedance figure 1 3 : normalized maxim um transient thermal impedance duty cycle d= 0.5,0.3,0.1,0.05,0.01,single tj max pdm* z jc * r jc+tc r jc =2.5 /w t t p d= t p /t 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) z jc,transient thermal resistance( normalized ) duty cycle d=0.5,0.3,0.1, 0.05,0.01,single tj max pdm* z ja * r ja+ta r ja =36 /w t t p d= t p /t 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) z ja,transient thermal resistance( normalized )
SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 7 of 9 www.silikron.com mechanical data
SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 8 of 9 www.silikron.com ordering and marking information device marking: SSFM2506 package (available) to - 2 5 2 operating temperature range c : - 55 to 175 oc devices per unit package type units/ tube tubes/inner box units/inner box in ner boxes/carton box units/carton box to - 2 52 - - - - - reliability test program test item conditions duration s ample size high temperature reverse bias( htrb ) tj=125 to 175 @ 80% of max vdss/vces/vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature g ate bias( ht g b ) tj=1 5 0 o r 175 @ 10 0% of max v g ss 168 hours 500 hours 1000 hours 3 lots x 77 devices
SSFM2506 ? silikron semiconductor co.,ltd. 20 11 . 02 . 25 version : 1. 2 page 9 of 9 www.silikron.com attention: any and all silikron product s described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained he rein stipulate the performance, characteristics, and functions of the described products in the indep endent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with som e probability. it is possible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures inc lude but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be r eproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwid e sales and service: sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. 2 - b501,328 xinghu street, suzhou industrial park, p.r.china tel: (86 - 512 ) 62560688 fax: (86 - 512 ) 65160705 e - mail: sales@ silikron .com
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